inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor IRF520FI features typical r ds(on) =0.23 avalanche rugged technology high current capability low gate charge 175 operating temperature descrition high current ,high speed switching dc-dc&dc-ac converters motor control ,audio amplifiers absolute maximum ratings(t a =25 ) symbol parameter value unit v dss drain-source voltage 100 v v gs gate-source voltage-continuous 20 v i d drain current-continuous 7 a i dm drain current-single plused 40 a p d total dissipation @t c =25 35 w t j max. operating junction temperature 175 t stg storage temperature -55~175 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 4.29 /w r th j-a thermal resistance,junction to ambient 62.5 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor IRF520FI electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 0.25ma 100 v v gs (th ) gate threshold voltage v ds = v gs ; i d = 0.25ma 2 4 v r ds( on ) drain-source on-resistance v gs = 10v; i d = 5a 0.27 i gss gate-body leakage current v gs = 20v;v ds = 0 100 na i dss zero gate voltage drain current v ds = 100v; v gs =0 250 ua v sd forward on-voltage i s = 10a; v gs =0 1.6 v ciss input capacitance v ds =25v,v gs =0v, f=1.0mhz 450 pf coss output capacitance 120 pf crss reverse transfer capacitance 40 pf switching characteristics (t c =25 ) symbol parameter conditions min typ max unit td(on) turn-on delay time v dd =50v,i d =5a v gs =10v r gs =4.7 15 ns tr rise time 75 ns td(off) turn-off delay time 40 ns tf fall time 30 ns pdf pdffactory pro www.fineprint.cn
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